Consequences of NO thermal treatments in the properties of dielectric films / SiC structures
Publication Type: Journal Articles (Refereed Article)
Year of Publication: 2010
Author(s): Stedile, F. C., Corrêa, S. A., Radtke, C., Miotti, L., Baumvol, I. J. R., Soares, G.V., Kong, Frederick Chung Jeng, Han, Jisheng, Hold, Leonie Katharina, Dimitrijev, Sima

SIMS Investigation of Oxygen in 3C-SiC on Si
Publication Type: Journal Articles (Refereed Article)
Year of Publication: 2009
Author(s): Han, Jisheng, Dimitrijev, Sima, Kong, Frederick Chung Jeng, Atanacio, Amanda

Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC
Publication Type: Journal Articles (Refereed Article)
Year of Publication: 2009
Author(s): Corrêa, S. A., Radtke, C., Soares, G.V., Miotti, L., Baumvol, I. J. R., Dimitrijev, Sima, Han, Jisheng, Hold, Leonie Katharina, Kong, Frederick Chung Jeng, Stedile, F. C.

Charge Trapping Properties of 3C- and 4H-SiC MOS Capacitors With Nitrided Gate Oxides
Publication Type: Journal Articles (Refereed Article)
Year of Publication: 2009
Author(s): Arora, Rajan, Rozen, John, Fleetwood, Daniel M., Galloway, Kenneth F., Zhang, C. Xuan, Han, Jisheng, Dimitrijev, Sima, Kong, Frederick Chung Jeng, Feldman, Leonard C., Pantelides, Sokrates T., Schrimpf, Ronald D.

Electrical Characteristics of Near-Interface Traps in 3C-SiC Metal Oxide Semiconductor Capacitors
Publication Type: Journal Articles (Refereed Article)
Year of Publication: 2008
Author(s): Kong, Frederick Chung Jeng, Dimitrijev, Sima, Han, Jisheng

MOS Capacitor Characteristics of 3C-SiC Films Deposited on Si Substrates at 1270°C
Publication Type: Conference Publications (Full Written Paper - Refereed)
Year of Publication: 2008
Author(s): Wang, Li, Dimitrijev, Sima, Hold, Leonie Katharina, Kong, Frederick Chung Jeng, Tanner, Philip, Han, Jisheng, Wagner, Gunter

SIMS investigation of Oxygen in 3C-SiC on Si
Publication Type: Conference Publications (Full Written Paper - Refereed)
Year of Publication: 2008
Author(s): Han, Jisheng, Dimitrijev, Sima, Kong, Frederick Chung Jeng, Tanner, Philip, Atanacio, Armand

Sequential thermal treatments of SiC in NO and O2: Atomic transport and electrical characteristics
Publication Type: Journal Articles (Refereed Article)
Year of Publication: 2007
Author(s): Soares, G. V., Baumvol, I. J. R., Hold, Leonie Katharina, Kong, Frederick Chung Jeng, Han, Jisheng, Dimitrijev, Sima, Radtke, C., Stedile, F. C.

Analysis of surface generation mechanisms in MOS capacitors
Publication Type: Conference Publications (Full Written Paper - Refereed)
Year of Publication: 2006
Author(s): Kong, Frederick Chung Jeng, Tanner, Philip, Hold, Leonie Katharina, Han, Jisheng, Dimitrijev, Sima

Characteristics of small-signal capacitances of silicon-on-sapphire MOSFETs
Publication Type: Journal Articles (Refereed Article)
Year of Publication: 2003
Author(s): Kong, Frederick Chung Jeng, Yeow, Y. T., Domyo, H.

Simulation of interface states effect on the scanning capacitance microscopy measurement of p–n junctions
Publication Type: Journal Articles (Refereed Article)
Year of Publication: 2002
Author(s): Yang, J., Kong, Frederick Chung Jeng