Nitridation of Silicon-Dioxide Films Grown on 6H Silicon Carbide
| File | Size | Format | |
|---|---|---|---|
| 7019.pdf | 61Kb | Adobe PDF | View |
| Title | Nitridation of Silicon-Dioxide Films Grown on 6H Silicon Carbide |
|---|---|
| Author | Dimitrijev, Sima; Li, Hui-feng; Harrison, Barry; Sweatman, Denis Russell |
| Year Published | 1997 |
| Publisher | Institute of Electrical and Electronics Engineers |
| Citation | IEEE Electron Device Letters, Vol. 18(5), pp. 175-177 |
| Peer Reviewed | Yes |
| Published | Yes |
| Publisher URI | http://ieeexplore.ieee.org/Xplore/dynhome.jsp |
| Alternative URI | http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=568752 |
| Copyright Statement | Copyright 1997 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. |
| Research Centre | Queensland Micro and Nanotechnology Centre |
| Faculty | Faculty of Engineering and Information Technology |
| Publication Type | Article in Scholarly Refereed Journal |
Please use this identifier to cite this record: http://hdl.handle.net/10072/15748
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