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dc.contributor.authorDimitrijev, S
dc.contributor.authorLi, HF
dc.contributor.authorHarrison, HB
dc.contributor.authorSweatman, D
dc.date.accessioned2017-05-03T13:39:59Z
dc.date.available2017-05-03T13:39:59Z
dc.date.issued1997
dc.date.modified2007-11-05T04:42:45Z
dc.identifier.issn0741-3106
dc.identifier.doi10.1109/55.568752
dc.identifier.urihttp://hdl.handle.net/10072/15748
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.format.extent62664 bytes
dc.format.mimetypeapplication/pdf
dc.languageEnglish
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers
dc.publisher.placeUSA
dc.publisher.urihttp://ieeexplore.ieee.org/Xplore/dynhome.jsp
dc.relation.ispartofpagefrom175
dc.relation.ispartofpageto177
dc.relation.ispartofissue5
dc.relation.ispartofjournalIEEE Electron Device Letters
dc.relation.ispartofvolume18
dc.subject.fieldofresearchHistory, heritage and archaeology
dc.subject.fieldofresearchElectronics, sensors and digital hardware
dc.subject.fieldofresearchcode43
dc.subject.fieldofresearchcode4009
dc.titleNitridation of Silicon-Dioxide Films Grown on 6H Silicon Carbide
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.facultyGriffith Sciences, Griffith School of Engineering
gro.rights.copyright© 1997 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
gro.date.issued1997
gro.hasfulltextFull Text
gro.griffith.authorHarrison, Barry B.
gro.griffith.authorDimitrijev, Sima


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