Effects of Processing Fluctuations on a 0.1µ MOSFET

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Title Effects of Processing Fluctuations on a 0.1µ MOSFET
Author Rowlands, David Duanne; Dimitrijev, Sima
Publication Title 1995 IEEE TENCON IEEE Region 10 International Conference on Microelectronics and VLSI
Editor IEEE Hong Kong Section & IEEE Asia-Pacific Region
Year Published 1995
Place of publication Hong Kong
Publisher IEEE
Abstract Fluctuations in the processing parameters can lead to a separation between the gate and the sourceldrain extensions in MOSFETs. A O.lµ MOSFET was simulated with 5%, and 10% separation and it was found that the transconductance was reduced, the threshold voltage was not significantly changed, and that there was no effect on the breakdown because the device has suffered punchthrough rather than avalanche breakdown.
Peer Reviewed No
Published Yes
Publisher URI http://www.ieee.org/portal/site
Alternative URI http://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=10682&isYear=1995
Copyright Statement Copyright 1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
ISBN 0780326245
Conference name IEEE TENCON IEEE Region 10 International Conference on Microelectronics and VLSI
Location Hong Kong
Date From 1995-11-06
Date To 1995-11-10
URI http://hdl.handle.net/10072/19922
Date Accessioned 1996-01-01
Date Available 2008-09-10T06:04:53Z
Language en_AU
Research Centre Queensland Micro and Nanotechnology Centre; Centre for Wireless Monitoring and Applications
Faculty Faculty of Science, Environment, Engineering and Technology
Publication Type Full written Paper - Non-refereed Proceedings
Publication Type Code e2

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