Drift-diffusion crossover and the intrinsic spin diffusion lengths in semiconductors

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Title Drift-diffusion crossover and the intrinsic spin diffusion lengths in semiconductors
Author Miah, Mohammad Idrish
Journal Name Journal of Applied Physics
Editor James P Viccaro
Year Published 2008
Place of publication United States
Publisher American Institute of Physics
Abstract We study the propagation of electron spin density polarization and spin currents in n -doped semiconductors within the two-component drift-diffusion model in an applied electric field (E). The drift and diffusion contributions to the spin currents are examined, which shows how the spin current could be enhanced. We find that there is a crossover field (Ex), where the drift and diffusion contribute equally to the spin current in the downstream direction. This suggests a possible way to identify whether the process for a given E would be in the drift or diffusion regime. We derive the expression for Ex and show that the intrinsic spin diffusion length in a semiconductor can be calculated directly from Ex. The results will be useful in obtaining transport properties of the carriers' spin in semiconductors. This investigation, however, highlights the need for further experiments to be conducted to measure Ex in semiconductors. © 2008 American Institute of Physics.
Peer Reviewed Yes
Published Yes
Publisher URI http://jap.aip.org/
Alternative URI http://dx.doi.org/10.1063/1.2898408
Volume 103
Issue Number 6
Page from 063718-1
Page to 063718-4
ISSN 0021-8979
Date Accessioned 2009-05-01
Date Available 2009-10-21T05:36:53Z
Language en_AU
Faculty Faculty of Science, Environment, Engineering and Technology
Subject Atomic, Molecular, Nuclear, Particle and Plasma Physics
URI http://hdl.handle.net/10072/23467
Publication Type Journal Articles (Refereed Article)
Publication Type Code c1

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