Electrical Characteristics of Near-Interface Traps in 3C-SiC Metal Oxide Semiconductor Capacitors

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Title Electrical Characteristics of Near-Interface Traps in 3C-SiC Metal Oxide Semiconductor Capacitors
Author Kong, Frederick Chung Jeng; Dimitrijev, Sima; Han, Jisheng
Editor John R Brews
Year Published 2008
Publisher I E E E
Citation I E E E Electron Device Letters, Vol. 29(9), pp. 1021-1023
Peer Reviewed Yes
Published Yes
Alternative URI http://dx.doi.org/10.1109/LED.2008.2001753
Copyright Statement Copyright 2008 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Research Centre Queensland Micro and Nanotechnology Centre
Faculty Faculty of Science, Environment, Engineering and Technology
Publication Type Journal Articles (Refereed Article)

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