Electrical Characteristics of Near-Interface Traps in 3C-SiC Metal Oxide Semiconductor Capacitors
| File | Size | Format | |
|---|---|---|---|
| 54137_1.pdf | 129Kb | Adobe PDF | View |
| Title | Electrical Characteristics of Near-Interface Traps in 3C-SiC Metal Oxide Semiconductor Capacitors |
|---|---|
| Author | Kong, Frederick Chung Jeng; Dimitrijev, Sima; Han, Jisheng |
| Editor | John R Brews |
| Year Published | 2008 |
| Publisher | I E E E |
| Citation | I E E E Electron Device Letters, Vol. 29(9), pp. 1021-1023 |
| Peer Reviewed | Yes |
| Published | Yes |
| Alternative URI | http://dx.doi.org/10.1109/LED.2008.2001753 |
| Copyright Statement | Copyright 2008 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| Research Centre | Queensland Micro and Nanotechnology Centre |
| Faculty | Faculty of Science, Environment, Engineering and Technology |
| Publication Type | Journal Articles (Refereed Article) |
Please use this identifier to cite this record: http://hdl.handle.net/10072/23551
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