MOS Capacitor Characteristics of 3C-SiC Films Deposited on Si Substrates at 1270°C

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Title MOS Capacitor Characteristics of 3C-SiC Films Deposited on Si Substrates at 1270°C
Author Wang, Li; Dimitrijev, Sima; Hold, Leonie Katharina; Kong, Frederick Chung Jeng; Tanner, Philip; Han, Jisheng; Wagner, Gunter
Publication Title Silicon carbide 2008--materials, processing and devices
Editor A. Powell, M. Dudley, C.M.Johnson, S-H. Ryu
Year Published 2008
Publisher Materials Research Society
Peer Reviewed Yes
Published Yes
Publisher URI http://www.mrs.org/s_mrs/index.asp
Alternative URI http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=12452&DID=211417&action=detail
Copyright Statement Copyright 2008 Materials Research Society. The attached file is reproduced here in accordance with the copyright policy of the publisher. Use hypertext link to access the publisher's webpage.
Research Centre Queensland Micro and Nanotechnology Centre
Faculty Faculty of Science, Environment, Engineering and Technology
Publication Type Conference Publications (Full Written Paper - Refereed)

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