QsRAM: the new memory technology
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| Title | QsRAM: the new memory technology |
|---|---|
| Author | Dimitrijev, Sima; Harrison, Barry |
| Publication Title | Microelectronics: Design, Technology, and Packaging (SPIE vol. 5274) |
| Year Published | 2004 |
| Place of publication | Bellingham WA USA |
| Publisher | SPIE |
| Abstract | In this paper we suggest a new near ideal memory technology to replace existing FLASH and DRAM, the new technology being based on the semiconducting material Silicon Carbide (SiC). The technology will not only be a replacement for FLASH and DRAM but will open up new and novel applications because of its unique capabilities. We provide the reasons why SiC will become the next generation memory material and suggest new structures that will be exploited by a new company QsRAM that will lead the market push for these new memories. |
| Peer Reviewed | Yes |
| Published | Yes |
| Alternative URI | http://dx.doi.org/10.1117/12.531136 |
| Conference name | Microelectronics: Design, Technology, and Packaging |
| Location | Perth, Australia |
| Date From | 2003-12-10 |
| Date To | 2003-12-10 |
| Date Accessioned | 2009-06-24 |
| Date Available | 2009-08-25T07:40:41Z |
| Language | en_AU |
| Research Centre | Queensland Micro and Nanotechnology Centre |
| Faculty | Faculty of Science, Environment, Engineering and Technology |
| Subject | PRE2009-Engineering and Technology |
| Publication Type | Conference Publications (Full Written Paper - Refereed) |
| Publication Type Code | e1a |
Please use this identifier to cite this record: http://hdl.handle.net/10072/25311
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