QsRAM: the new memory technology

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Title QsRAM: the new memory technology
Author Dimitrijev, Sima; Harrison, Barry
Publication Title Microelectronics: Design, Technology, and Packaging (SPIE vol. 5274)
Year Published 2004
Place of publication Bellingham WA USA
Publisher SPIE
Abstract In this paper we suggest a new near ideal memory technology to replace existing FLASH and DRAM, the new technology being based on the semiconducting material Silicon Carbide (SiC). The technology will not only be a replacement for FLASH and DRAM but will open up new and novel applications because of its unique capabilities. We provide the reasons why SiC will become the next generation memory material and suggest new structures that will be exploited by a new company QsRAM that will lead the market push for these new memories.
Peer Reviewed Yes
Published Yes
Alternative URI http://dx.doi.org/10.1117/12.531136
Conference name Microelectronics: Design, Technology, and Packaging
Location Perth, Australia
Date From 2003-12-10
Date To 2003-12-10
Date Accessioned 2009-06-24
Language en_AU
Research Centre Queensland Micro and Nanotechnology Centre
Faculty Faculty of Science, Environment, Engineering and Technology
Subject PRE2009-Engineering and Technology
Publication Type Conference Publications (Full Written Paper - Refereed)
Publication Type Code e1a

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