Diffusive to drift-diffusion crossover of spin transport in the low-field regime
Author(s)
Miah, M Idrish
Griffith University Author(s)
Year published
2008
Metadata
Show full item recordAbstract
Electric field-dependent electron spin diffusion in GaAs is investigated experimentally. We consider the three spin transport regimes, namely diffusive, drift-diffusion crossover, and drift. Of them, spin transport in the diffusive and drift-diffusion crossover regimes is studied in more detail. We also estimate the drift-diffusion crossover field (Ex) and the intrinsic spin diffusion length (ds) in the nondegenerate regime. The estimated value of ds is found to be 1.74 孬 a factor of 0.87 lower than that reported in the literature. The technique, however, demonstrates it as a convenient and useful tool to measure Ex and ds ...
View more >Electric field-dependent electron spin diffusion in GaAs is investigated experimentally. We consider the three spin transport regimes, namely diffusive, drift-diffusion crossover, and drift. Of them, spin transport in the diffusive and drift-diffusion crossover regimes is studied in more detail. We also estimate the drift-diffusion crossover field (Ex) and the intrinsic spin diffusion length (ds) in the nondegenerate regime. The estimated value of ds is found to be 1.74 孬 a factor of 0.87 lower than that reported in the literature. The technique, however, demonstrates it as a convenient and useful tool to measure Ex and ds in semiconductors. 頲008 American Institute of Physics.
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View more >Electric field-dependent electron spin diffusion in GaAs is investigated experimentally. We consider the three spin transport regimes, namely diffusive, drift-diffusion crossover, and drift. Of them, spin transport in the diffusive and drift-diffusion crossover regimes is studied in more detail. We also estimate the drift-diffusion crossover field (Ex) and the intrinsic spin diffusion length (ds) in the nondegenerate regime. The estimated value of ds is found to be 1.74 孬 a factor of 0.87 lower than that reported in the literature. The technique, however, demonstrates it as a convenient and useful tool to measure Ex and ds in semiconductors. 頲008 American Institute of Physics.
View less >
Journal Title
Applied Physics Letters
Volume
92
Issue
9
Publisher URI
Subject
Physical sciences
Electrical and electromagnetic methods in geophysics
Engineering