Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC

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Title Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC
Author Corrêa, S. A.; Radtke, C.; Soares, G.V.; Miotti, L.; Baumvol, I. J. R.; Dimitrijev, Sima; Han, Jisheng; Hold, Leonie Katharina; Kong, Frederick Chung Jeng; Stedile, F. C.
Year Published 2009
Publisher American Institute of Physics
Citation Applied Physics Letters, Vol. 94, pp. 251909-1-251909-3
Peer Reviewed Yes
Published Yes
Alternative URI http://dx.doi.org/10.1063/1.3159812
Copyright Statement Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://dx.doi.org/10.1063/1.3159812
Research Centre Queensland Micro and Nanotechnology Centre
Faculty Faculty of Science, Environment, Engineering and Technology
Publication Type Journal Articles (Refereed Article)

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