Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC
| File | Size | Format | |
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| 56253_1.pdf | 94Kb | Adobe PDF | View |
| Title | Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC |
|---|---|
| Author | Corrêa, S. A.; Radtke, C.; Soares, G.V.; Miotti, L.; Baumvol, I. J. R.; Dimitrijev, Sima; Han, Jisheng; Hold, Leonie Katharina; Kong, Frederick Chung Jeng; Stedile, F. C. |
| Year Published | 2009 |
| Publisher | American Institute of Physics |
| Citation | Applied Physics Letters, Vol. 94, pp. 251909-1-251909-3 |
| Peer Reviewed | Yes |
| Published | Yes |
| Alternative URI | http://dx.doi.org/10.1063/1.3159812 |
| Copyright Statement | Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://dx.doi.org/10.1063/1.3159812 |
| Research Centre | Queensland Micro and Nanotechnology Centre |
| Faculty | Faculty of Science, Environment, Engineering and Technology |
| Publication Type | Journal Articles (Refereed Article) |
Please use this identifier to cite this record: http://hdl.handle.net/10072/28539
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