Charge Trapping Properties of 3C- and 4H-SiC MOS Capacitors With Nitrided Gate Oxides

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Title Charge Trapping Properties of 3C- and 4H-SiC MOS Capacitors With Nitrided Gate Oxides
Author Arora, Rajan; Rozen, John; Fleetwood, Daniel M.; Galloway, Kenneth F.; Zhang, C. Xuan; Han, Jisheng; Dimitrijev, Sima; Kong, Frederick Chung Jeng; Feldman, Leonard C.; Pantelides, Sokrates T.; Schrimpf, Ronald D.
Year Published 2009
Publisher IEEE
Citation IEEE Transactions on Nuclear Science, Vol. 56(6), pp. 3185-3191
Peer Reviewed Yes
Published Yes
Alternative URI http://dx.doi.org/10.1109/TNS.2009.2031604
Copyright Statement Copyright 2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from IEEE.
Research Centre Queensland Micro and Nanotechnology Centre
Faculty Faculty of Science, Environment, Engineering and Technology
Publication Type Journal Articles (Refereed Article)

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