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dc.contributor.authorGhandi, R
dc.contributor.authorDomeij, M
dc.contributor.authorEsteve, R
dc.contributor.authorBuono, B
dc.contributor.authorSchoner, A
dc.contributor.authorHan, J
dc.contributor.authorDimitrijev, S
dc.contributor.authorReshanov, SA
dc.contributor.authorZetterling, C-M
dc.contributor.authorOstling, M
dc.contributor.editorBauer, AJ
dc.contributor.editorFriedrichs, P
dc.contributor.editorKrieger, M
dc.contributor.editorPensl, G
dc.contributor.editorRupp, R
dc.contributor.editorSeyller, T
dc.date.accessioned2017-05-03T11:51:44Z
dc.date.available2017-05-03T11:51:44Z
dc.date.issued2010
dc.date.modified2011-03-10T08:11:14Z
dc.identifier.issn0255-5476
dc.identifier.doi10.4028/www.scientific.net/MSF.645-648.661
dc.identifier.urihttp://hdl.handle.net/10072/36527
dc.description.abstractIn this work, the electrical performance in terms of maximum current gain, ON-resistance and blocking capability has been compared for 4H-SiC BJTs passivated with different surface passivation layers. Variation in BJT performance has been correlated to densities of interface traps and fixed oxide charge, as evaluated through MOS capacitors. Six different methods were used to fabricate SiO2 surface passivation on BJT samples from the same wafer. The highest current gain was obtained for PECVD deposited SiO2 which was annealed in N2O ambient at 1100 àduring 3 hours. Variations in breakdown voltage for different surface passivations were also found, and this is attributed to differences in fixed oxide charge that can affect the optimum dose of the high voltage JTE termination.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.language.isoeng
dc.publisherTrans Tech Publications Ltd
dc.publisher.placeSwitzerland
dc.relation.ispartofstudentpublicationN
dc.relation.ispartofpagefrom661
dc.relation.ispartofpageto664
dc.relation.ispartofjournalMaterials Science Forum
dc.relation.ispartofvolume645-648
dc.rights.retentionY
dc.subject.fieldofresearchPhysical chemistry
dc.subject.fieldofresearchMicroelectronics
dc.subject.fieldofresearchMaterials engineering
dc.subject.fieldofresearchcode3406
dc.subject.fieldofresearchcode400908
dc.subject.fieldofresearchcode4016
dc.titleExperimental evaluation of different passivation layers on the performance of 3kV 4H-SiC BJTs
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.rights.copyrightSelf-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the author[s] for more information.
gro.date.issued2010
gro.hasfulltextNo Full Text
gro.griffith.authorDimitrijev, Sima


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