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dc.contributor.authorZhai, Tianyou
dc.contributor.authorFang, Xiaosheng
dc.contributor.authorLiao, Meiyong
dc.contributor.authorXu, Xijin
dc.contributor.authorLi, Liang
dc.contributor.authorLiu, Baodan
dc.contributor.authorKoide, Yasuo
dc.contributor.authorMa, Ying
dc.contributor.authorYao, Jiannian
dc.contributor.authorBando, Yoshio
dc.contributor.authorGolberg, Dmitri
dc.date.accessioned2017-05-03T15:55:04Z
dc.date.available2017-05-03T15:55:04Z
dc.date.issued2010
dc.date.modified2011-08-19T06:45:51Z
dc.identifier.issn1936-0851
dc.identifier.doi10.1021/nn9012466
dc.identifier.urihttp://hdl.handle.net/10072/40172
dc.description.abstractThe synthesis of high-quality In2Se3 nanowire arrays via thermal evaporation method and the photoconductive characteristics of In2Se3 individual nanowires are first investigated. The electrical characterization of a single In2Se3 nanowire verifies an intrinsic n-type semiconductor behavior. These single-crystalline In2Se3 nanowires are then assembled in visible-light sensors which demonstrate a fast, reversible, and stable response. The high photosensitivity and quick photoresponse are attributed to the superior single-crystal quality and large surface-to-volume ratio resulting in fewer recombination barriers in nanostructures. These excellent performances clearly demonstrate the possibility of using In2Se3 nanowires in next-generation sensors and detectors for commercial, military, and space applications.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.language.isoeng
dc.publisherAmerican Chemical Society
dc.publisher.placeUnited States
dc.relation.ispartofstudentpublicationN
dc.relation.ispartofpagefrom1596
dc.relation.ispartofpageto1602
dc.relation.ispartofissue3
dc.relation.ispartofjournalACS Nano
dc.relation.ispartofvolume4
dc.rights.retentionY
dc.subject.fieldofresearchCondensed Matter Physics not elsewhere classified
dc.subject.fieldofresearchCondensed Matter Characterisation Technique Development
dc.subject.fieldofresearchcode020499
dc.subject.fieldofresearchcode020401
dc.titleFabrication of High-Quality In2Se3 Nanowire Arrays toward High-Performance Visible-Light Photodetectors
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.rights.copyrightSelf-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the author[s] for more information.
gro.date.issued2010
gro.hasfulltextNo Full Text
gro.griffith.authorXu, Xijin


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