dc.contributor.author | Zhai, Tianyou | |
dc.contributor.author | Fang, Xiaosheng | |
dc.contributor.author | Liao, Meiyong | |
dc.contributor.author | Xu, Xijin | |
dc.contributor.author | Li, Liang | |
dc.contributor.author | Liu, Baodan | |
dc.contributor.author | Koide, Yasuo | |
dc.contributor.author | Ma, Ying | |
dc.contributor.author | Yao, Jiannian | |
dc.contributor.author | Bando, Yoshio | |
dc.contributor.author | Golberg, Dmitri | |
dc.date.accessioned | 2017-05-03T15:55:04Z | |
dc.date.available | 2017-05-03T15:55:04Z | |
dc.date.issued | 2010 | |
dc.date.modified | 2011-08-19T06:45:51Z | |
dc.identifier.issn | 1936-0851 | |
dc.identifier.doi | 10.1021/nn9012466 | |
dc.identifier.uri | http://hdl.handle.net/10072/40172 | |
dc.description.abstract | The synthesis of high-quality In2Se3 nanowire arrays via thermal evaporation method and the photoconductive characteristics of In2Se3 individual nanowires are first investigated. The electrical characterization of a single In2Se3 nanowire verifies an intrinsic n-type semiconductor behavior. These single-crystalline In2Se3 nanowires are then assembled in visible-light sensors which demonstrate a fast, reversible, and stable response. The high photosensitivity and quick photoresponse are attributed to the superior single-crystal quality and large surface-to-volume ratio resulting in fewer recombination barriers in nanostructures. These excellent performances clearly demonstrate the possibility of using In2Se3 nanowires in next-generation sensors and detectors for commercial, military, and space applications. | |
dc.description.peerreviewed | Yes | |
dc.description.publicationstatus | Yes | |
dc.language | English | |
dc.language.iso | eng | |
dc.publisher | American Chemical Society | |
dc.publisher.place | United States | |
dc.relation.ispartofstudentpublication | N | |
dc.relation.ispartofpagefrom | 1596 | |
dc.relation.ispartofpageto | 1602 | |
dc.relation.ispartofissue | 3 | |
dc.relation.ispartofjournal | ACS Nano | |
dc.relation.ispartofvolume | 4 | |
dc.rights.retention | Y | |
dc.subject.fieldofresearch | Condensed Matter Physics not elsewhere classified | |
dc.subject.fieldofresearch | Condensed Matter Characterisation Technique Development | |
dc.subject.fieldofresearchcode | 020499 | |
dc.subject.fieldofresearchcode | 020401 | |
dc.title | Fabrication of High-Quality In2Se3 Nanowire Arrays toward High-Performance Visible-Light Photodetectors | |
dc.type | Journal article | |
dc.type.description | C1 - Articles | |
dc.type.code | C - Journal Articles | |
gro.rights.copyright | Self-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the author[s] for more information. | |
gro.date.issued | 2010 | |
gro.hasfulltext | No Full Text | |
gro.griffith.author | Xu, Xijin | |