Demonstration of p-type 3C–SiC grown on 150 mm Si(1 0 0) substrates by atomic-layer epitaxy at 1000 °C

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Title Demonstration of p-type 3C–SiC grown on 150 mm Si(1 0 0) substrates by atomic-layer epitaxy at 1000 °C
Author Wang, Li; Dimitrijev, Sima; Han, Jisheng; Tanner, Philip; Iacopi, Alan Victor; Hold, Leonie Katharina
Year Published 2011
Publisher Elsevier B.V.
Citation Journal of Crystal Growth, Vol. 329(1), pp. 67-70
Peer Reviewed Yes
Published Yes
Alternative URI http://dx.doi.org/10.1016/j.jcrysgro.2011.06.041
Research Centre Queensland Micro and Nanotechnology Centre
Faculty Faculty of Science, Environment, Engineering and Technology
Publication Type Journal Articles (Refereed Article)

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