Demonstration of p-type 3C–SiC grown on 150 mm Si(1 0 0) substrates by atomic-layer epitaxy at 1000 °C

Abstract

The potential for enhancement of Si-based devices by growth of SiC films on large-diameter Si wafers is hampered by the very high temperatures (close to the Si melting temperature) that are needed for growth and doping by the existing techniques. Here, we present a unique doping method for growth of Al-doped single-crystalline 3C–SiC epilayers on 150 mm Si(1 0 0) substrates by atomic-layer epitaxy at 1000 1C using a conventional low-pressure chemical vapor deposition reactor. Al atomic concentration in the range of 2.81019 to 2.11020 cm3, proportional to the supply volume of trimethylaluminium, is experimentally demonstrated. A doping mechanism, based on the supply sequence of precursors and reactor pressure, is proposed.