Electron-phonon hydrodynamical model for semiconductors

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Title Electron-phonon hydrodynamical model for semiconductors
Author Romano, V.; Zwierz, Marcin
Journal Name Zeitschrift fuer Angewandte Mathematik und Physik
Year Published 2010
Place of publication Switzerland
Publisher Birkhaeuser Verlag AG
Abstract A hydrodynamical model for the electron-phonon system in semiconductor is developed by closing the moment system arising from the coupled Boltzmann equations for electrons and phonons with the maximum entropy principle. Limiting models are obtained under appropriate scaling, and comparisons with the existing models of charge transport in semiconductors including the thermal effects of the crystal lattice are presented.
Peer Reviewed Yes
Published Yes
Alternative URI http://dx.doi.org/10.1007/s00033-010-0089-9
Volume 61
Issue Number 6
Page from 1111
Page to 1131
ISSN 0044-2275
Date Accessioned 2011-12-08; 2012-02-16T05:31:28Z
Date Available 2012-02-16T05:31:28Z
Research Centre Centre for Quantum Dynamics
Faculty Faculty of Science, Environment, Engineering and Technology
Subject Mathematical Physics; Statistical Mechanics, Physical Combinatorics and Mathematical Aspects of Condensed Matter
URI http://hdl.handle.net/10072/42774
Publication Type Journal Articles (Refereed Article)
Publication Type Code c1x

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