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dc.contributor.authorGhandi, Reza
dc.contributor.authorBuono, Benedetto
dc.contributor.authorDomeij, Martin
dc.contributor.authorEsteve, Romain
dc.contributor.authorSchoner, Adolf
dc.contributor.authorHan, Jisheng
dc.contributor.authorDimitrijev, Sima
dc.contributor.authorReshanov, Sergey A
dc.contributor.authorZetterling, Carl-Mikael
dc.contributor.authorOstling, Mikael
dc.date.accessioned2017-05-03T11:51:45Z
dc.date.available2017-05-03T11:51:45Z
dc.date.issued2011
dc.date.modified2012-03-14T05:35:18Z
dc.identifier.issn0018-9383
dc.identifier.doi10.1109/TED.2010.2082712
dc.identifier.urihttp://hdl.handle.net/10072/43611
dc.description.abstractIn this brief, the electrical performance in terms of maximum current gain and breakdown voltage is compared experimentally and by device simulation for 4H-SiC BJTs passivated with different surface-passivation layers. Variation in bipolar junction transistor (BJT) performance has been correlated to densities of interface traps and fixed oxide charge, as evaluated through MOS capacitors. Six different methods were used to fabricate SiO2 surface passivation on BJT samples from the same wafer. The highest current gain was obtained for plasma-deposited SiO2 which was annealed in N2O ambient at 1100àfor 3 h. Variations in breakdown voltage for different surface passivations were also found, and this was attributed to differences in fixed oxide charge that can affect the optimum dose of the high-voltage junction-termination extension (JTE). The dependence of breakdown voltage on the dose was also evaluated through nonimplanted BJTs with etched JTE.
dc.description.peerreviewedYes
dc.description.publicationstatusYes
dc.languageEnglish
dc.language.isoeng
dc.publisherIEEE
dc.publisher.placeUnited States
dc.relation.ispartofstudentpublicationN
dc.relation.ispartofpagefrom259
dc.relation.ispartofpageto265
dc.relation.ispartofissue1
dc.relation.ispartofjournalIEEE Transactions on Electron Devices
dc.relation.ispartofvolume58
dc.rights.retentionY
dc.subject.fieldofresearchMicroelectronics
dc.subject.fieldofresearchcode400908
dc.titleSurface-Passivation Effects on the Performance of 4H-SiC BJTs
dc.typeJournal article
dc.type.descriptionC1 - Articles
dc.type.codeC - Journal Articles
gro.date.issued2011
gro.hasfulltextNo Full Text
gro.griffith.authorDimitrijev, Sima


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