InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate

There are no files associated with this record.

Title InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate
Author Han, Jisheng; Dimitrijev, Sima; Wang, Li; Iacopi, Alan Victor; Qu, Shuang; Xu, Xiangang
Journal Name Materials Science Forum
Year Published 2011
Place of publication Switzerland
Publisher Trans Tech Publications
Abstract Gallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs.
Peer Reviewed Yes
Published Yes
Alternative URI http://dx.doi.org/10.4028/www.scientific.net/MSF.679-680.801
Copyright Statement Self-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the author[s] for more information.
Volume 679-680
Page from 801
Page to 803
ISSN 0255-5476
Date Accessioned 2012-02-27; 2012-03-29T04:52:18Z
Date Available 2012-03-29T04:52:18Z
Research Centre Queensland Micro and Nanotechnology Centre
Faculty Faculty of Science, Environment, Engineering and Technology
Subject Microelectronics and Integrated Circuits
URI http://hdl.handle.net/10072/44073
Publication Type Journal Articles (Refereed Article)
Publication Type Code c1

Show simple item record

Griffith University copyright notice