InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate
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| Title | InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate |
|---|---|
| Author | Han, Jisheng; Dimitrijev, Sima; Wang, Li; Iacopi, Alan Victor; Qu, Shuang; Xu, Xiangang |
| Journal Name | Materials Science Forum |
| Year Published | 2011 |
| Place of publication | Switzerland |
| Publisher | Trans Tech Publications |
| Abstract | Gallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs. |
| Peer Reviewed | Yes |
| Published | Yes |
| Alternative URI | http://dx.doi.org/10.4028/www.scientific.net/MSF.679-680.801 |
| Copyright Statement | Self-archiving of the author-manuscript version is not yet supported by this journal. Please refer to the journal link for access to the definitive, published version or contact the author[s] for more information. |
| Volume | 679-680 |
| Page from | 801 |
| Page to | 803 |
| ISSN | 0255-5476 |
| Date Accessioned | 2012-02-27; 2012-03-29T04:52:18Z |
| Date Available | 2012-03-29T04:52:18Z |
| Research Centre | Queensland Micro and Nanotechnology Centre |
| Faculty | Faculty of Science, Environment, Engineering and Technology |
| Subject | Microelectronics and Integrated Circuits |
| URI | http://hdl.handle.net/10072/44073 |
| Publication Type | Journal Articles (Refereed Article) |
| Publication Type Code | c1 |
Please use this identifier to cite this record: http://hdl.handle.net/10072/44073
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