Size-Dependent Characteristics of Indium-Seeded Si Nanowire Growth

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Title Size-Dependent Characteristics of Indium-Seeded Si Nanowire Growth
Author Iacopi, Francesca; Richard, O.; Eichhammer, Y.; Bender, H.; Vereecken, P.M.; Gendt, Stefan De; Heyns, Marc
Journal Name Electrochemical and Solid-State Letters
Year Published 2008
Place of publication United States
Publisher Electrochemical Society
Abstract Si nanowires were grown by a vapor–liquid–solid mechanism using indium catalyst particles with sizes between 10 and 200 nm. Transmission electron microscopy analysis indicates that the growth morphology of the nanostructures changes drastically when the particle size is only a few tens of nanometers. The larger wires are monocrystalline, growing with 111 orientation and limited tapering. The simultaneously grown smaller wires appear strongly tapered, due to an accumulation of amorphous Si on the sidewalls, and present a poor crystalline quality. A model based on the solubility of Si in the In–Si eutectic is proposed to account for the size-dependent change of morphology.
Peer Reviewed Yes
Published Yes
Alternative URI http://dx.doi.org/10.1149/1.2945800
Copyright Statement Copyright The Electrochemical Society, Inc. 2008. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in Electrochemical and Solid-State Letters, Vol. 11(9), pp. K98-K100.
Volume 11
Issue Number 9
Page from K98
Page to K100
ISSN 1099-0062
Date Accessioned 2012-02-18
Date Available 2012-05-15T22:46:47Z
Language en_US
Research Centre Queensland Micro and Nanotechnology Centre
Faculty Faculty of Science, Environment, Engineering and Technology
Subject Surfaces and Structural Properties of Condensed Matter
URI http://hdl.handle.net/10072/44945
Publication Type Journal Articles (Refereed Article)
Publication Type Code c1x

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