Fabrication of SiC p-i-n betavoltaic cell with 63Ni irradiation source

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Title Fabrication of SiC p-i-n betavoltaic cell with 63Ni irradiation source
Author Guo, Hui; Shi, Yanqiang; Zhang, Yuming; Zhang, Yujuan; Han, Jisheng
Publication Title 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
Editor Jianguo Ma, Tianjin University
Year Published 2011
Place of publication United States
Publisher IEEE
Abstract A high open-circuit voltage betavoltaic cell based on a SiC pin homojunction is achieved. The open-circuit voltage (0.98V) and the power density (8.0nW/cm2) of the cell are the highest in the all reported SiC betavoltaic cells using 63Ni as irradiation source. The fill factor (FF) of the cell (74%) is the highest in all of the wide band gap semiconductor betavoltaic cells, including SiC and GaN.
Peer Reviewed Yes
Published Yes
Alternative URI http://dx.doi.org/10.1109/EDSSC.2011.6117636
Copyright Statement Copyright 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
ISBN 978-1-4577-1998-1
Conference name EDSSC 2011
Location Start Epoch Hotel, Tianjin, China
Date From 2011-11-17
Date To 2011-11-18
URI http://hdl.handle.net/10072/46188
Date Accessioned 2012-04-10
Language en_US
Research Centre Queensland Micro and Nanotechnology Centre
Faculty Faculty of Science, Environment, Engineering and Technology
Subject Electrical and Electronic Engineering
Publication Type Conference Publications (Full Written Paper - Refereed)
Publication Type Code e1

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