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Fabrication of SiC p-i-n betavoltaic cell with 63Ni irradiation source

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Title Fabrication of SiC p-i-n betavoltaic cell with 63Ni irradiation source
Author Guo, Hui; Shi, Yanqiang; Zhang, Yuming; Zhang, Yujuan; Han, Jisheng
Publication Title 2011 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2011
Editor Jianguo Ma, Tianjin University
Year Published 2011
Place of publication United States
Publisher IEEE
Abstract A high open-circuit voltage betavoltaic cell based on a SiC pin homojunction is achieved. The open-circuit voltage (0.98V) and the power density (8.0nW/cm2) of the cell are the highest in the all reported SiC betavoltaic cells using 63Ni as irradiation source. The fill factor (FF) of the cell (74%) is the highest in all of the wide band gap semiconductor betavoltaic cells, including SiC and GaN.
Peer Reviewed Yes
Published Yes
Alternative URI http://dx.doi.org/10.1109/EDSSC.2011.6117636
ISBN 978-1-4577-1998-1
Conference name EDSSC 2011
Location Start Epoch Hotel, Tianjin, China
Date From 2011-11-17
Date To 2011-11-18
URI http://hdl.handle.net/10072/46188
Date Accessioned 2012-04-10; 2012-08-09T22:51:13Z
Date Available 2012-08-09T22:51:13Z
Research Centre Queensland Micro and Nanotechnology Centre
Faculty Faculty of Science, Environment, Engineering and Technology
Subject Electrical and Electronic Engineering
Publication Type Conference Publications (Full Written Paper - Refereed)
Publication Type Code e1

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