Investigation of Ultralow Leakage in MOS Capacitors on 4H SiC

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Title Investigation of Ultralow Leakage in MOS Capacitors on 4H SiC
Author Cheong, Kuan Yew; Dimitrijev, Sima; Han, Jisheng
Editor Renuka P Jindal
Year Published 2004
Publisher IEEE
Citation IEEE Transactions on Electron Devices, Vol. 51(9), pp. 1361-1365
Peer Reviewed Yes
Published Yes
Alternative URI http://dx.doi.org/10.1109/TED.2004.833966
Copyright Statement Copyright 2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Research Centre Queensland Micro and Nanotechnology Centre
Faculty Faculty of Engineering and Information Technology
Publication Type Journal Articles (Refereed Article)

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