Investigation of Ultralow Leakage in MOS Capacitors on 4H SiC
| File | Size | Format | |
|---|---|---|---|
| 28303.pdf | 307Kb | Adobe PDF | View |
| Title | Investigation of Ultralow Leakage in MOS Capacitors on 4H SiC |
|---|---|
| Author | Cheong, Kuan Yew; Dimitrijev, Sima; Han, Jisheng |
| Editor | Renuka P Jindal |
| Year Published | 2004 |
| Publisher | IEEE |
| Citation | IEEE Transactions on Electron Devices, Vol. 51(9), pp. 1361-1365 |
| Peer Reviewed | Yes |
| Published | Yes |
| Alternative URI | http://dx.doi.org/10.1109/TED.2004.833966 |
| Copyright Statement | Copyright 2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. |
| Research Centre | Queensland Micro and Nanotechnology Centre |
| Faculty | Faculty of Engineering and Information Technology |
| Publication Type | Journal Articles (Refereed Article) |
Please use this identifier to cite this record: http://hdl.handle.net/10072/5142
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