Evidence of a highly compressed nanolayer at the epitaxial silicon carbide interface with silicon
Author(s)
Iacopi, Francesca
E. Brock, Ryan
Iacopi, Alan
Hold, Leonie
H.Dauskardt, Reinhold
Year published
2013
Metadata
Show full item recordAbstract
Through a novel methodology for evaluating layer-by-layer residual stresses in epitaxial silicon carbide films with resolution down to 10 nm, we indicate the existence of a highly compressed interfacial nanolayer between the films and their silicon substrates. This layer is consistently present underneath all types of silicon carbide films examined herein, regardless of the extent of residual tensile stress measured in the full thickness of the films, which varies from 300 up to 1300 MPa. We link this nanolayer to the carbonization step of the film growth process and we discuss in detail the implications in terms of fracture ...
View more >Through a novel methodology for evaluating layer-by-layer residual stresses in epitaxial silicon carbide films with resolution down to 10 nm, we indicate the existence of a highly compressed interfacial nanolayer between the films and their silicon substrates. This layer is consistently present underneath all types of silicon carbide films examined herein, regardless of the extent of residual tensile stress measured in the full thickness of the films, which varies from 300 up to 1300 MPa. We link this nanolayer to the carbonization step of the film growth process and we discuss in detail the implications in terms of fracture behaviour by bulge testing of micromachined membranes.
View less >
View more >Through a novel methodology for evaluating layer-by-layer residual stresses in epitaxial silicon carbide films with resolution down to 10 nm, we indicate the existence of a highly compressed interfacial nanolayer between the films and their silicon substrates. This layer is consistently present underneath all types of silicon carbide films examined herein, regardless of the extent of residual tensile stress measured in the full thickness of the films, which varies from 300 up to 1300 MPa. We link this nanolayer to the carbonization step of the film growth process and we discuss in detail the implications in terms of fracture behaviour by bulge testing of micromachined membranes.
View less >
Journal Title
Acta Materialia
Volume
61
Issue
17
Subject
Compound Semiconductors
Condensed Matter Physics
Materials Engineering
Mechanical Engineering