Hydrogen Incorporation Dependence on the Thermal Growth Route in Dielectric/SiC Structures
Author(s)
Correa, Silma A
Soares, Gabriel V
Tanner, Philip
Han, Jisheng
Dimitrijev, Sima
Stedile, Fernanda C
Year published
2013
Metadata
Show full item recordAbstract
The incorporation of hydrogen in dielectric/SiC structures and Pt/dielectric/SiC structures whose dielectric films were thermally grown in O2, NO, or O2 followed by annealing in NO was investigated. The amount and the distribution of hydrogen incorporated and the capacitance-voltage characteristics were observed to be dependent on the thermal growth route employed. Hydrogen was mainly incorporated in the dielectric film/SiC interface region and larger amounts were incorporated when the Pt electrode was used. Annealing in hydrogen increased the negative shift in the flatband voltage, which was more pronounced when the Pt ...
View more >The incorporation of hydrogen in dielectric/SiC structures and Pt/dielectric/SiC structures whose dielectric films were thermally grown in O2, NO, or O2 followed by annealing in NO was investigated. The amount and the distribution of hydrogen incorporated and the capacitance-voltage characteristics were observed to be dependent on the thermal growth route employed. Hydrogen was mainly incorporated in the dielectric film/SiC interface region and larger amounts were incorporated when the Pt electrode was used. Annealing in hydrogen increased the negative shift in the flatband voltage, which was more pronounced when the Pt electrode was used in the case of NO-annealed SiO2/SiC sample.
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View more >The incorporation of hydrogen in dielectric/SiC structures and Pt/dielectric/SiC structures whose dielectric films were thermally grown in O2, NO, or O2 followed by annealing in NO was investigated. The amount and the distribution of hydrogen incorporated and the capacitance-voltage characteristics were observed to be dependent on the thermal growth route employed. Hydrogen was mainly incorporated in the dielectric film/SiC interface region and larger amounts were incorporated when the Pt electrode was used. Annealing in hydrogen increased the negative shift in the flatband voltage, which was more pronounced when the Pt electrode was used in the case of NO-annealed SiO2/SiC sample.
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Journal Title
ECS Journal of Solid State Science and Technology
Volume
2
Issue
8
Subject
Condensed matter physics
Physical chemistry
Microelectronics