Contamination resists in metastable atom lithography

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Title Contamination resists in metastable atom lithography
Author Baker, Mark Adam; Palmer, Adam James; Sang, Robert
Publication Title COMMAD 2002 PROCEEDINGS
Editor Michael Gal
Year Published 2002
Place of publication New Jersey
Publisher Institute of Electrical and Electronic Engineers, Inc.
Abstract We have used a metastable argon beam to expose gold-coated silicon substrates covered with a self assembled monolayer (SAM) resist. The substrates have been covered with a patterned mask, with feamres of 10 pm size, and exposed to the atomic beam. Subsequent etching revealed negative contrast patterns, consistent with the formation of a negative contamination resist in the SAM, which we attribute to background pump oil vapour. Metastable dosages of 9x10L4a toms cnY2 and exposure times < 1 hr have been sufficient to produce reliable negative resists.
Peer Reviewed No
Published Yes
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Copyright Statement Copyright 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
ISBN 0-7803-7571-8
Conference name 2002 Conference on Optoelectronic and Microelectronic Materials and Devices
Location Sydney
Date From 2002-12-11
Date To 2002-12-13
Date Accessioned 2004-09-01
Language en_AU
Research Centre Centre for Quantum Dynamics
Faculty Faculty of Science
Subject Atomic and Molecular Physics
Publication Type Conference Publications (Full Written Paper - Non-Refereed)
Publication Type Code e2

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