Scaling effects on deep-submicron vertical MOSFETs

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Title Scaling effects on deep-submicron vertical MOSFETs
Author Ahmadi, Amin; Rowlands, David Duanne; Alam, K.
Publication Title Microelectronics, MEMS, and Nanotechnology SPIE volume 6035: MICROELECTRONICS: DESIGN, TECHNOLOGY, AND PACKAGING II
Year Published 2005
Place of publication Bellingham WA 98227-0010 USA
Publisher International Society for Optical Engineering (SPIE)
Abstract Vertical MOSFETs are gaining importance for VLSI circuit integration and for reducing the feature size. They are continuously scaled down in channel length due to the increasing need for higher packing density and higher device speed. Also 3D compaction of circuits is possible using these transistors. In order to achieve as dense and fast as possible circuits several vertical MOSFETs using different technologies have been fabricated. In this paper, 120nm vertical n-channel MOSFET uniformly doped in silicon substrate and channel region is simulated using the ISE_TCAD software, developed by the Integrated Systems Engineering and compared with one of similar fabricated transistors from the literature [4]. The results show more than 92% match between the simulated and the practical devices in terms of terminal characteristics considering the fact that the ideal mobility models as well as the most suitable mesh condition are applied to the simulation flow. Tending to scale down the length of the vertical MOSFETs and observe the short channel effects, transistors with 80nm and 100nm channel length were also simulated. As expected, shrinking the channel length results in increasing the current and decreasing the threshold voltage as part of short channel effects. Other effects such as hot-carrier and substrate current for the three devices were investigated under the certain values of gate and source voltages. Keywords: Vertical MOSFET, hot-carrier effect, short channel, mobility model, mesh
Peer Reviewed No
Published Yes
Conference name Microelectronics, MEMS, and Nanotechnology
Location Queensland University of Technology
Date From 2005-12-11
Date To 2005-12-14
Date Accessioned 2006-02-17
Language en_AU
Faculty Faculty of Engineering and Information Technology
Subject Other Electronic Engineering
Publication Type Conference Publications (Extract Paper)
Publication Type Code e3

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